hi-sincerity microelectronics corp. spec. no. : mos200902 issued date : 2009.01.20 revised date : page no. : 1/4 h10n60f hsmc product specification H12N60f H12N60f n-channel power mosfet (600v,12a) 3-lead to-220fp) plastic package package code: f applications pin 1: gate pin 2: drain pin 3: source 1 2 3 ? switch mode power supply ? uninterruptable power supply ? high speed power switching H12N60f series symbol features g d s ? h10n60f is a high voltage nchannel enhancement mode power mosfet chip fabricated in advanced silicon epitaxial planar technology ? advanced termination scheme to provide enhanced voltageblocking capability ? avalanche energy specified ? source to drain diode recovery time comparable to a discrete fast recovery diode; ? the packaged product is widely used in ac-dc power suppl iers, dcdc converters and hbridge pwm motor drivers absolute maximum ratings symbol parameter value units v dss drain-source voltage 600 v continuous drain current (v gs @10v, t c =25 o c) 12 a i d continuous drain current (v gs @10v, t c =100 o c) 7.6 a i dm pulsed drain current *1 40 a v gs gate-to-source voltage 30 v to-220ab 175 total power dissipation (t c =25 o c) to-220fp 50 w to-220ab 1.43 p d linear derating factor to-220fp 0.41 w/ c e as single pulse avalanche energy *2 68 mj i ar avalanche current *1 12 a e ar repetitive avalanche energy *1 66 mj t j operating junction temperature range -55 to 150 c t stg storage temperature range -55 to 150 c *1: repetitive rating; pulse width limited by max. junction temperature *2: starting t j =25 c, l=1.2mh, r g =25 , i as =10a *3: i sd 14a, di/dt 130a/us, v dd v (br)dss , t j 150 c thermal characteristics symbol parameter value units to-220ab 1.3 r jc thermal resistance junction to case (max.) to-220fp 5 c/w r ja thermal resistance junction to ambient (max.) 62 c/w
hi-sincerity microelectronics corp. spec. no. : mos200902 issued date : 2009.01.20 revised date : page no. : 2/4 h10n60f hsmc product specification electrical characteristics (t j =25 c, unless otherwise specified) symbol characteristic test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs =0v, i d =250ua 600 - - v v (br)dss / t j breakdown voltage temp. coefficient reference to 25 o c, i d =1ma - 0.58 - v/ o c drain-source leakage current v ds =600v, v gs =0v - - 10 ua i dss drain-source leakage current v ds =400v, v gs =0v, t j =125 c 60 ua i gssf gate-source forward leakage v gsf =30v, v ds =0v - - 100 na i gssr gate-source reverse leakage v gsr =-30v, v ds =0v - - -100 na v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v r ds(on) static drain-source on-resistance v gs =10v, i d =6.0a *4 - - 0.8 g fs forward transconductance v ds =40v, i d =6.0a 5 - s c iss input capacitance - 1830 - c oss output capacitance - 157 - c rss reverse transfer capacitance v ds =25v, v gs =0v, f=1mhz - 2.2 - pf t d(on) turn-on delay time - 50 - t r rise time - 50 - t d(off) turn-off delay time - 311 - t f fall time (v dd =325v, i d =12a, r g =4.7 , r d =32 ) *4 - 55 - ns q g total gate charge - 52 q gs gate-source charge - 10 q gd gate-drain charge (v ds =520v, i d =12a, v gs =10v) *4 - 19 nc source-drain diode symbol characteristic min. typ. max. units i s continuous source current (body diode) page1 mosfet symbol showing the integral reverse p-n junction diode. - - 12 a v sd diode forward voltage i s =12a, v gs =0v, t j =25 c *4 - - 1.4 v *4: pulse test: pulse width 300us, duty cycle 2% *5: c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss
hi-sincerity microelectronics corp. spec. no. : mos200902 issued date : 2009.01.20 revised date : page no. : 3/4 h10n60f hsmc product specification to-220ab dimension to-220fp dimension important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of hsmc. ? hsmc reserves the right to make changes to its products without notice. ? hsmc semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? hsmc assumes no liability for any consequence of customer prod uct design, infringement of paten ts, or application assistance. head office and factory: ? head office (hi-sincerity microelectronics corp.): 10f.,no. 61, sec. 2, chung-shan n. rd. taipei taiwan r.o.c. tel: 886-2-25212056 fax: 886-2-25632712, 25368454 dim min. max. a 6.48 7.40 c 4.40 4.90 d 2.34 3.00 e 0.45 0.80 f 9.80 10.36 g 3.10 3.60 i 2.70 3.43 j 0.60 1.00 k 2.34 2.74 l 12.48 13.60 m 15.67 16.20 n 0.90 1.47 o 2.00 2.96 1/2/4/5 - *5 o unit: mm marking: note: green label is used for pb-free packing pin style: 1.gate 2.drain 3.source material: ? lead solder plating: sn60/pb40 (normal), sn/3.0ag/0.5cu or pure-tin (pb-free) ? mold compound: epoxy resin family, flammability solid bu rning class: ul94v-0 3-lead to-220fp plastic package hsmc package code: f a d f g i k l m 3 2 1 c j n 3 e 2 o 4 5 1 a b e g i k m o p 3 2 1 c n h d tab f j dim min. max. marking: a 5.58 7.49 b 8.38 8.90 c 4.40 4.70 d 1.15 1.39 e 0.35 0.60 f 2.03 2.92 g 9.66 10.28 note: green label is used for pb-free packing pin style: 1.gate 2 & tab.drain 3.source h - *16.25 i - *3.83 j 3.00 4.00 k 0.75 0.95 l 2.54 3.42 material: ? lead solder plating: sn60/pb40 (normal), sn/3.0ag/0.5cu or pure-tin (pb-free) ? mold compound: epoxy resin family, flammability solid bu rning class: ul94v-0 3-lead to-220ab m 1.14 1.40 n - *2.54 o 12.70 14.27 p 14.48 15.87 l *: typical, unit: mm plastic package hsmc package code: e
hi-sincerity microelectronics corp. spec. no. : mos200902 issued date : 2009.01.20 revised date : page no. : 4/4 h10n60f hsmc product specification soldering methods for hsmc?s products 1. storage environment: temperature=10 o c~35 o c humidity=65%15% 2. reflow soldering of surface-mount devices figure 1: temperature profile t p profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (t l to t p ) <3 o c/sec <3 o c/sec preheat - temperature min (ts min ) - temperature max (ts max ) - time (min to max) (ts) 100 o c 150 o c 60~120 sec 150 o c 200 o c 60~180 sec ts m a x t o t l - ramp-up rate <3 o c/sec <3 o c/sec time maintained above: - temperature (t l ) - time (t l ) 183 o c 60~150 sec 217 o c 60~150 sec peak temperature (t p ) 240 o c +0/-5 o c 260 o c +0/-5 o c time within 5 o c of actual peak temperature (t p ) 10~30 sec 20~40 sec ramp-down rate <6 o c/sec <6 o c/sec time 25 o c to peak temperature <6 minutes <8 minutes 3. flow (wave) soldering (solder dipping) products peak temperature dipping time pb devices. 245 o c 5 o c 5sec 1sec pb-free devices. 260 o c +0/-5 o c 5sec 1sec t l ramp-down ramp-up ts max ts min critical zone t l to t p t s preheat t l t p 25 temperature t 25 o c to peak time
|
